Quvvatli elektron uskunalarda GTO snubber kondensatori

Quvvatli elektron uskunalardagi GTO snubber kondensatori Taqdim etilgan rasm

Qisqacha tavsif:

Snubber sxemalari kommutatsiya sxemalarida ishlatiladigan diodlar uchun juda muhimdir. Bu diodni teskari tiklash jarayonida yuzaga kelishi mumkin bo'lgan haddan tashqari kuchlanishning ko'tarilishidan himoya qilishi mumkin.

Bizga elektron pochta xabarini yuboring PDF sifatida yuklab oling

Mahsulot tafsiloti

Mahsulot teglari

Texnik ma'lumotlar

Ishlash harorati oralig'i	Maksimal ish harorati., Yuqori, maksimal: + 85℃ Yuqori toifadagi harorat: +85℃ Pastki toifadagi harorat: -40℃
sig'im diapazoni	0,22～3μF
Nominal kuchlanish	3000V.DC ～10000V.DC
Cap.tol	±5% (J) ; ±10% (K)
Kuchlanishga bardosh bering	1.35Un DC/10S
Tarqalish koeffitsienti	tgδ≤0.001 f=1KHz
Izolyatsiya qarshiligi	C≤0.33μF RS≥15000 MΩ (20℃ 100V.DC 60S da) C ＞0.33μF RS*C ≥5000S (20℃ 100V.DC 60S da)
Zarba oqimiga bardosh bering	ma'lumotlar varag'iga qarang
Hayot davomiyligi	100000 soat (Un; Hotspot≤70°C)
Malumot standarti	IEC 61071;

Xususiyat

1. Mylar lentasi, qatron bilan muhrlangan;

2. Mis gayka simlari;

3. Yuqori kuchlanishga, past tgδ ga, past harorat ko'tarilishiga qarshilik;

4. past ESL va ESR;

5. Yuqori impulsli oqim.

Ilova

1. GTO Snubber.

2. Eng yuqori kuchlanish va eng yuqori oqim yutilish himoyasi bo'lganda, elektr elektron uskunalarida keng qo'llaniladi.

Odatdagi sxema

Kontur chizmasi

Texnik xususiyatlar

Un=3000V.DC
Sig'im (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	35	44	52	25	1100	242	30
0.33	43	44	52	25	1000	330	35
0.47	51	44	52	22	850	399	45
0.68	61	44	52	22	800	544	55
1	74	44	52	20	700	700	65
1.2	80	44	52	20	650	780	75
1.5	52	70	84	30	600	900	45
2.0	60	70	84	30	500	1000	55
3.0	73	70	84	30	400	1200	65
4.0	83	70	84	30	350	1400	70
Un=6000V.DC
Sig'im (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	43	60	72	25	1500	330	35
0.33	52	60	72	25	1200	396	45
0.47	62	60	72	25	1000	470	50
0.68	74	60	72	22	900	612	60
1	90	60	72	22	800	900	75

Un=7000V.DC
Sig'im (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.22	45	57	72	25	1100	242	30
0.68	36	80	92	28	1000	680	25
1.0	43	80	92	28	850	850	30
1.5	52	80	92	25	800	1200	35
1.8	57	80	92	25	700	1260-yil	40
2.0	60	80	92	23	650	1300	45
3.0	73	80	92	22	500	1500	50

Un=8000V.DC
Sig'im (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.33	35	90	102	30	1100	363	25
0.47	41	90	102	28	1000	470	30
0.68	49	90	102	28	850	578	35
1	60	90	102	25	800	800	40
1.5	72	90	102	25	700	1050	45
2.0	83	90	102	25	650	1300	50

Un=10000V.DC
Sig'im (μF)	φD (mm)	L(mm)	L1(mm)	ESL(nH)	dv/dt(V/μS)	Ipk(A)	Irms(A)
0.33	45	114	123	35	1500	495	30
0.47	54	114	123	35	1300	611	35
0.68	65	114	123	35	1200	816	40
1	78	114	123	30	1000	1000	55
1.5	95	114	123	30	800	1200	70